SELECTIVE EPITAXY OF SILICON IN SILICON DIOXIDE APERTURES WITH SUPPRESSION OF UNWANTED FORMATION OF FACETS,申请号US19910704749-传众专利搜索

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发明名称	SELECTIVE EPITAXY OF SILICON IN SILICON DIOXIDE APERTURES WITH SUPPRESSION OF UNWANTED FORMATION OF FACETS
摘要
申请公布号	US5212112(A)	申请公布日期	1993.05.18
申请号	US19910704749	申请日期	1991.05.23
申请人	AT&T BELL LABORATORIES	发明人	LYNCH, WILLIAM T.
分类号	H01L21/20;H01L21/336;H01L21/76;H01L21/762;H01L29/78	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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