| 摘要 |
<p>PURPOSE:To improve breakdown strength in the intersecting part of a signal wiring with a scanning wiring and also to improve a resisting characteristic against static electricity in production process in an active matrix liquid crystal display device. CONSTITUTION:The scanning wiring 2 and an insulated layer 9 are formed on a glass substrate 10 and, then, a TFT element semiconductor layer 4 is formed. At this time, an intersecting part semiconductor layer 3 which is linked along a position where the signal wiring is to be formed is simultaneously formed. But, here, there is no electric connection between the intersecting part semiconductor layer 3 and the TFT element semiconductor layer 4. Thereafter, the signal wiring 1 is formed. Such structure is effective for improving inter- wiring breakdown strength between the signal wiring 1 and the scanning wiring 2 and also improving the resisting characteristic against static electricity in production process.</p> |
