| 摘要 |
PURPOSE:To provide a forming method of fine resist patterns with low quantity of exposure light by using a specified electrodeposition photoresist and taking a proper time for development. CONSTITUTION:A resist pattern is formed by a photographic method using an anion-type photosetting electrodeposition coating material. This coating material essentially consists of a specified water-soluble or water-dispersible resin having 80-400mg-KOH/g acidity. The resist is developed with an aq. soln. of sodium bicarbonate of 0.5-5% concn. and then washed with deionized water having <=15ppm hardness. |
