| 摘要 |
PURPOSE:To form a super-fine resist pattern by directly forming a pattern corresponding to a phase shifter in a phase shift photomask on a resist applied on a substrate. CONSTITUTION:An upper layer resist pattern 10 is obtd. by exposing to g ray 14 and developing, and then a lower resist film 8 is exposed to i ray 12 with using a stepper in the area between a source electrode 4 and a train electrode 5. In this process, the upper layer resist pattern 10 acts as a phase shift layer for the i ray 12 and the edge of the upper layer resist pattern 10 acts as a fine light shielding part. Thereby, the lower layer resist film 8 except for the area corresponding to the edge of the pattern 10 is exposed to light. By developing the lower layer resist film 8, a super-fine resist pattern 16 for a gate can be obtd. |
