| 摘要 |
A complementary field effect transistor with an N channel MOSFET and a P channel MOSFET formed on the same substrate is disclosed. On the P type main surface of the semiconductor substrate, an N channel MOSFET is formed comprising a gate electrode and a pair of impurity regions which becomes a pair of source/drain regions. Each impurity region of the N channel MOSFET comprises an impurity region of relatively low concentration formed so as to extend to beneath the above mentioned gate electrode, and an impurity region having a concentration higher than that of said impurity region having low concentration formed in a position at a distance from said gate electrode joining the impurity region of low concentration. The length of the portion located beneath the above mentioned gate electrode in the surface portion of the impurity region of low concentration is not less than 0.1 mu m in the direction identical to the direction of the channel length. This complementary field effect transistor has both reliability and high speed in the N channel MOSFET, and without punch-through in the P channel MOSFET, even though the devices become more minute.
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