发明名称 |
Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device |
摘要 |
A method for depositing a passivation layer on a semiconductor structure having a high resistance value polysilicon layer formed thereon while maintaining the high resistance value thereof and comprises sequentially depositing a silicon oxide layer and a silicon nitride layer, on a high resistance value polysilicon layer of a partially completed semiconductor structure to form a passivation layer thereover. The passivation layer including the silicon oxide layer and the silicon nitride layer is annealed with oxygen plasma in a chamber. The annealed passivation layer is then heated in the presence of a conditioning gas in the chamber to thereby maintaining the resistance of the high resistance value polysilicon layer.
|
申请公布号 |
US5212119(A) |
申请公布日期 |
1993.05.18 |
申请号 |
US19910797994 |
申请日期 |
1991.11.26 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
HAH, HYUNG C.;KIM, JUNG T.;BAEK, YONG K.;CHEON, HEE K. |
分类号 |
H01L21/316;H01L21/02;H01L21/3105;H01L21/314;H01L21/318;H01L21/3205;H01L21/324;H01L21/822;H01L23/52;H01L27/04;H01L27/11 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|