| 摘要 |
PURPOSE:To provide the title MFS type semiconductor element employing ferroelectric having simple crystal structure in which no oxide is employed at all and high temperature processing step is not required because of low crystallizing temperature. CONSTITUTION:As for the material of the ferromagnetic layer 3 of the MFS type semiconductor element, IV-VI type compounds such as GeFe, SnTe, PbxGeTe1-x (0.01<=X<=1.00), etc., are applicable. Furthermore, it is recommended that a buffer layer shall be provided between the ferroelectric layer and a semiconductor substrate 1 and (or) an electrode 4. |
