Method for isolating SiO2 layers from PZT, PLZT, and platinum layers

摘要

An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.