| 摘要 |
PURPOSE:To try the improvement of yield by selectively applying plasma oxidation to an Al electrode and by regenerating into Al2O3 wherein the circumference of the electrode is demarcated to prevent a short-circuit trouble and cntamination. CONSTITUTION:An N<+> layer 1 and a P<+> layer 2 are provided on an Si substrate 100 and an Al layer 6 is made by holing an SiO2 film 12. If plasma oxidation is done for Al by Si3N4 masks 13a and by high-frequency wave in O2, the Al becomes Al2O3 films 14a, 14b and a sharp end section will not occur at an Al electrode 6a. Furthermore, a dry type process prevents the induction of contamination and moisture and if treatment is successively done by exchanging with Freon gas, the masks 13a will quickly and selectively be removed. The above process is repeated in the same way and an Al electrode 18, Al2O3 layers 15a, 15b, an electrode 16 and Al2O3 layer 17 are successively stacked to form a semiconductor device. In this composition, the temperature for treatment is entirely and sufficiently low. Therefore, projections will not encounter at the Al electrode. Furthermore, Al2O3 is buried between electrodes to improve the dielectric strength between layers. And the removal of Si3N4 masks is done by gas exchange. Therefore, the device will be protected against the contamination from the outside and yield will be improved. |
