发明名称 |
Method of making polysilicon Schottky clamped transistor and vertical fuse devices |
摘要 |
An improved method for fabricating polysilicon Schottky clamped transistors and vertical fuse devices in the same semiconductor structure is disclosed. The resulting structure yields an improved Schottky clamped transistor and vertical fuse device. The improved Schottky transistor has a silicide rectifying contact between the base and collector of the transistor, the vertical fuse is provided with a direct contact between an aluminum contact metal and a polysilicon emitter contact.
|
申请公布号 |
US5212102(A) |
申请公布日期 |
1993.05.18 |
申请号 |
US19920894403 |
申请日期 |
1992.06.05 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
IRANMANESH, ALI A.;GANSCHOW, GEORGE E. |
分类号 |
H01L27/07;H01L27/102 |
主分类号 |
H01L27/07 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|