| 摘要 |
PURPOSE:To flatten an element by a method wherein an abnormally grown part is removed by etching using the mask for selective growth used for formation of a current blocking layer, and the sectorially formed etched part is filled up by the insulating material such as polyimide and the like. CONSTITUTION:The active layer 11 on an N-type InP substrate 12 is InGaAsP semiconductor crystal corresponding to the luminous wavelength of 1.3mum, and the active layer 11 is sandwiched by a P-type InP clad layer 13 and an N-type InP buffer layer 12 from the upper and the lower sides in a mesa stripe 11. Both sides of the mesa stripe 111 are filled up by an Fe-doped InP current blocking layer 16, and a V-shaped groove filled up by polyimide 18 of insulator is provided on a part of the current blocking layer 16. An electrode layer 14, consisting of a P-type InGaAsP semiconductor layer, is formed on the P-type clad layer 13. Also, a P-type electrode 110 is formed on the upper surface of an element, and an N-type electrode 19 is formed on the reverse side of the substrate. |
