| 摘要 |
PURPOSE:To make it possible to ensure ESD-resisting property by a method wherein the source region and the drain region of an input-output transistor is connected to a metal wiring layer in the vicinity of the source region and the drain region through the intermediary of a source contact region and a drain contact region in which impurities were deeply diffused. CONSTITUTION:After a source contact region 22 and a drain contact region 23 have been deeply formed, a circumferential transistor, the source regions 25 and 27 and the drain regions 26 and 28 of an input-output transistor are shallowly formed. The source contact region 22 and the drain contact region 23 of the input-output transistor and the source region 20 and the drain region 21 of a memory transistor are deeply formed in the same depth. As a result, the connection of the source electrode 32 of the input-output transistor and the source contact region 22 and the connection of the drain electrode 33 and the drain contact region 23 can be conducted excellently. |
