发明名称 |
Method for forming isolation regions in a semiconductor device |
摘要 |
A process for fabricating isolation regions in a semiconductor substrate which does not depend upon pattern definition capability. In one embodiment a device isolation region (30) is formed in a semiconductor substrate (12) by first creating a trench (18) in the substrate (12). A single-crystal SiGe layer (24) is formed to overlie the wall surface (20) of the trench (18). A layer of selectively-deposited, single-crystal silicon (26) is formed in the trench (18) using both the bottom surface (22) of the trench (18) and the SiGe layer (24) as a nucleation site for the selective deposition process. After the single-crystal silicon layer (26) is formed, the SiGe layer (24) is selectively removed and the previously occupied space is filled with a dielectric material to form isolation region (30).
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申请公布号 |
US5212110(A) |
申请公布日期 |
1993.05.18 |
申请号 |
US19920887958 |
申请日期 |
1992.05.26 |
申请人 |
MOTOROLA, INC. |
发明人 |
PFIESTER, JAMES R.;KIRSCH, HOWARD C. |
分类号 |
H01L21/20;H01L21/306;H01L21/762 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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