| 摘要 |
Test structure for measuring the side diffusion in technologies with doping from polysilicon, with dis-alignment correction; it is a device comprised of several MOS dumping transistors, of different sizes, with buried contacts, positioned alternatively on the right and left. The structure must contain at least four transistors, despite the fact that the practical implementation presented contains nine. The measurement made is of the electric type using linear adjustments of the inverted draining current with respect to the length of the transistors. Its application consists in automatically obtaining, using electric measurements, of the side diffusion length in auto-doping processing from polycrystalline material.<IMAGE> |
