| 摘要 |
<p>PURPOSE:To easily form a plurality of ferroelectric capacitors connected in series or parallel on a semiconductor substrate. CONSTITUTION:After a silicon oxide film 102 is formed on a silicon substrate 100 as an insulating film, lower electrodes 104 of Pt are formed on the film 102. A silicon oxide film 106 provided with contact holes 106a is formed on the surface of the film 102 including the electrodes 104 as an interlayer insulating film so that contact holes 106a can be formed on the electrodes 104 and a PZT film 108 is formed by sol-gel, etc. Then upper electrodes 110 of Pt are formed by etching the PZT film 108 so that remaining pieces of the PTZ film 108 in the holes 106a can be separated from each other. The remaining pieces of the film 108 between the lower and upper electrodes 104 and 110 function as ferroelectric capacitors and, when the upper or lower electrodes 110 or 104 are made common, the capacitors can be connected in series or parallel.</p> |
