| 摘要 |
PURPOSE:To obtain a method for easily forming a pattern of a metallic oxide film, such as a ferroelectric film of a semiconductor memory element using a capacitor, requiring an ultra-fine machining. CONSTITUTION:An acid producing agent producing an acid by light, laser light, electron beam, X-ray, or the like is mixed with a mixture of an alkoxide or alkoxy alcoholate of a metallic element and an alcohol or alkoxy alcohol to produce a sol. Film made of the sol is exposed to light or the like, developed, and patterned in a precursor state. After that, the film is baked by a thermal treatment to form a metallic oxide film pattern. |
