HALBLEITEREINRICHTUNG MIT BIPOLAREM TRANSISTOR UND ISOLIERSCHICHT-FELDEFFEKTTRANSISTOR.,申请号DE19863688222-传众专利搜索

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发明名称	HALBLEITEREINRICHTUNG MIT BIPOLAREM TRANSISTOR UND ISOLIERSCHICHT-FELDEFFEKTTRANSISTOR.
摘要
申请公布号	DE3688222(D1)	申请公布日期	1993.05.13
申请号	DE19863688222	申请日期	1986.07.10
申请人	HITACHI, LTD., TOKIO/TOKYO, JP	发明人	WATANABE, TAKAO, KOKUBUNJI-SHI TOKYO, JP;KITUKAWA, GORO;HORI, RYOICHI, NISHITAMA-GUN TOKYO, JP;ITOH, KIYOO, HIGASHIKURUME-SHI TOKYO, JP;KAWAJIRI, YOSHIKI, HACHIOJI-SHI TOKYO, JP;KAWAHARA, TAKAYUKI, KOKUBUNJI-SHI TOKYO, JP
分类号	G11C7/12;G11C8/10;H03K5/08;H03K17/00;H03K17/693;H03K19/017;H03K19/0175;H03K19/0944;(IPC1-7):H03K5/02;H03K19/08;H03K19/01;H03K19/096;G11C7/00	主分类号	G11C7/12
代理机构		代理人
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