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发明名称 OBERFLAECHENABSCHLUSS EINES VERBINDUNGSHALBLEITERS.
摘要 A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.
申请公布号 DE3880019(D1) 申请公布日期 1993.05.13
申请号 DE19883880019 申请日期 1988.05.31
申请人 INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US 发明人 FOWLER, ALAN B., YORKTOWN HEIGHTS NEW YORK 10598, US;FREEOUF, JOHN L., KATONAH NEW YORK 10536, US;KIRCHNER, PETER D., PUTNAM VALLEY NEW YORK 10579, US;WARREN, ALAN C., PEEKSKILL NEW YORK 10566, US;WOODALL, JERRY M., KATONAH NEW YORK 10507, US
分类号 H01L21/20;H01L21/28;H01L21/314;H01L21/331;H01L21/338;H01L29/06;H01L29/26;H01L29/267;H01L29/43;H01L29/47;H01L29/73;H01L29/737;H01L29/78;H01L29/786;H01L29/80;H01L29/812;H01L29/872;H01L33/00;(IPC1-7):H01L21/314;H01L29/40;H01L21/285 主分类号 H01L21/20
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