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发明名称
IONENIMPLANTATION ZUR VERBREITERUNG DER VERBOTENEN ZONE DES EMITTERS IN BIPOLAREN TRANSISTOREN.
摘要
申请公布号
DE3586854(T2)
申请公布日期
1993.05.13
申请号
DE19853586854T
申请日期
1985.07.09
申请人
FAIRCHILD SEMICONDUCTOR CORP., CUPERTINO, CALIF., US
发明人
ANAND, KRANTI, SUNNYVALE CALIFORNIA 94087, US;STRAIN, ROBERT J., SAN JOSE CALIFORNIA 95120, US
分类号
H01L29/73;H01L21/265;H01L21/331;H01L29/167;H01L29/737;(IPC1-7):H01L21/265;H01L29/08
主分类号
H01L29/73
代理机构
代理人
主权项
地址
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