Flash-EEPROM with blockwise erase capability - controls Y-decoder and transfer circuit so that source-line latch circuit potential is applied via bit line to memory block field

摘要

The non-volatile semiconductor memory device, or Flash-EEPROM, may be erased by blocks. The address bus is routed to a source line decoder (20) which drives source lines (281,282). The source lines correspond to column addresses in an X,Y matrix. Read/write circuitry are located in circuit (7,8). A number of high voltage generation circuits corresponding to the number of memory blocks permit collective erasure of the data within each memory block. ADVANTAGE - Rapid erasure of FLASH circuitry.