High speed testing of field-effect transistors.

摘要

A testing circuit for testing field-effect transistors of, for example, a random access memory includes weak N-channel pull-down field-effect transistors and weak P-channel pull-up field-effect transistors for testing field-effect transistors of opposite type to be tested. The weak field-effect transistors are placed in series with the opposite type of field-effect transistors. When the series coupled field-effect transistors are turned on, the voltage at the common node of the field-effect transistors is sensed to determine whether the common node is pulled-up or pulled-down in potential to indicate whether a field-effect transistor under test is functional.