发明名称 Semiconductor resistance element and process for fabricating same
摘要 A semiconductor resistance element of one electrical conduction type comprises: a semiconductor region including a first impurity of opposite electrical conduction type and second impurity of one electrical conduction type, wherein said second impurity is more heavily introduced so that a predetermined resistance is obtained; and electrode regions provided on both ends of said semiconductor region.
申请公布号 US5210438(A) 申请公布日期 1993.05.11
申请号 US19910809044 申请日期 1991.12.16
申请人 FUJITSU LIMITED 发明人 NAKAMURA, SHUNJI
分类号 H01L21/02;H01L21/329;H01L21/336 主分类号 H01L21/02
代理机构 代理人
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