| 摘要 |
In order to so improve a process for the manufacture of a layer on a substrate wherein by means of a pulsed laser beam a coating material is ablated from a carrier, transported in the form of a current of particles to the substrate and deposited on the latter to form the layer, that it is suitable for the manufacture of thin precision layers, preferably in a defined number of atom layers, as is, for example, required in the manufacture of semiconductors, it is proposed that the layer be manufactured as thin precision layer by pulse duration and pulse intensity of the laser beam being selected such that ionization and heating-up of the coating material take place essentially only in the zone of interaction of the laser light with the coating material so the stream of particles is formed as cluster-free plasma containing single, non-coherent ions or atoms.
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