| 摘要 |
A method for fabricating a heteroepitaxial semiconductor substrate body used as a substrate of a compound semiconductor device. The heteroepitaxial semiconductor substrate body comprises a semiconductor substrate of a first semiconductor material and an epitaxial layer of a second semiconductor material grown heteroepitaxially on the semiconductor substrate. The method comprises steps of growing the epitaxial layer on the semiconductor substrate heteroepitaxially to form the heteroepitaxial semiconductor substrate body, depositing a stress inducing layer on a top surface of the epitaxial layer so as to induce a stress in the epitaxial layer, applying a cyclic annealing process for repeatedly and alternately holding the heteroepitaxial substrate body including the stress inducing layer deposited on the epitaxial layer at a first temperature and at a second temperature lower than the first temperature, and removing the stress inducing layer from the top surface of the epitaxial layer.
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