发明名称 Method for forming patterned films on a substrate
摘要 A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.
申请公布号 US5209815(A) 申请公布日期 1993.05.11
申请号 US19910711224 申请日期 1991.06.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FLEMING, ROBERT J.;LAWSON, MARGARET J.;LEONARD, EDWARD J.;RHOADS, BRYAN N.
分类号 H01L21/31;H01L21/027;H01L21/3205;H01L21/768;H01L23/52;H05K3/04 主分类号 H01L21/31
代理机构 代理人
主权项
地址