发明名称 |
Method for forming patterned films on a substrate |
摘要 |
A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.
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申请公布号 |
US5209815(A) |
申请公布日期 |
1993.05.11 |
申请号 |
US19910711224 |
申请日期 |
1991.06.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FLEMING, ROBERT J.;LAWSON, MARGARET J.;LEONARD, EDWARD J.;RHOADS, BRYAN N. |
分类号 |
H01L21/31;H01L21/027;H01L21/3205;H01L21/768;H01L23/52;H05K3/04 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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