| 摘要 |
<p>PURPOSE:To decrease the number of sheets of the photomasks to be used at the time of patterning and to enable forming signal wirings with transparent conductive layers as well as to facilitate the connection to driving circuits by constituting the above matrix substrate in such a manner the need for the specific patterning of channel layers is eliminated and an n<+> type semiconductor layer can be subjected simultaneously to patterning of source electrodes and drain electrodes. CONSTITUTION:A picture element electrodes and image signal line 3, a source and drain electrods 4 and an ohmic contact layer 5 are successively laminated and are patterned to prescribed shapes. The channel layer 6, a gate insulating layer 7, a gate electrode 8, and a scanning signal line 9 are then successively laminated. The gate electrode 8 and the scanning signal line 9 are then patterned to prescribed shapes. A protective layer 10 is thereafter formed. This protective layer 10 as well as the upper source and drain electrode 4, the ohmic contact layer 5, a channel region 6, a gate insulating layer 7, the gate electrode 8 and the scanning signal line 9 are patterned to prescribed shapes.</p> |
