| 摘要 |
<p>PURPOSE:To eliminate parasitic channels to as to decrease leak currents and to enable increasing on/off of transistors by using a p type electric field effect type gate insulated transistor (FEIGTR) as a switching transistor for feeding electricity to picture element electrodes. CONSTITUTION:This semiconductor device for a light valve substrate is constituted by forming a picture element array part consisting of a switch element group for selectively feeding electricity to at least a picture element electrode group on a semiconductor silicon single crystal film existing on an electrical insulating material. The switch element group consists of the p type FEIGTR having a well 11 consisting of an N type impurity, a gate oxide film 12, a gate electrode 13 consisting of a polycrystalline silicon film, and a source 14 and drain 15 respectively consisting of high-concn. p type impurity layers. An intermediate insulating film 111 separates a signal line 110 and a polycrystalline silicon film 18 for picture element driving electrodes. The higher on/off can be taken if the transistor of a p type LDD structure is adopted.</p> |
