| 摘要 |
PURPOSE: To obtain a gate arrey basic cell which is equipped with a mask programmable gate. CONSTITUTION: A plurality of mode regions 12 and 14, separated by an insulation region 16, are formed on a semiconductor substrate. Each of them contain channel regions 22, 28 and an insulation layer formed on them. A plurality of gates 30 are formed, each gate 30 contains a first portion 30a covering one of channel regions 22, a second portion 30b covering the channel region 28 adjacent to one of the channel regions, and a third portion 30c covering the insulating region 16 between two channel regions, and they are formed so as to have each channel region below one gate. Next, a selected number of gates are etched, and the gates of a desired shape are produced. Finally, the insulation layer is formed on the entire arrays, contact holes are formed in this layer, and mutual connections for constituting desired transistor devices are performed. |
