| 摘要 |
PURPOSE:To obtain a thin film semiconductor device which can be formed on a substrate having low heat resistant temperature and has preferable characteristics by employing a thin insulator film obtained by forming a thin semiconductor film by performing an anodic oxidation in an oxygen plasma. CONSTITUTION:A polycrystalline Si film 2 is formed at a substrate temperature of 550 deg.C on a transparent insulating substrate 1 such as, for example, a glass substrate, an SiO2 film 3 is coated at the substrate temperature of 430 deg.C, and windows for source and drain regions are opened. Then, P<+> type ions are implanted, a heat treatment is performed at 550 deg.C to form an N<+> type layer 4, and the film 3 is removed. Subsequently, the surface layer of the film 2 is directly oxidized by a plasma anodic oxidation method to form an SiO2 film 5 as a gate insulating film. Then, an electrode contacting hole is opened, an aluminum is deposited on the entire surface, and a source electrode 6, a drain electrode 7 and a gate electrode 8 are the formed. Thereafter, a heat treatment of 400 deg.C is performed in H2 atmosphere. |
