发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To sufficiently maintain the sensitivity of a sense amplifier even when a memory cell array is formed with high density by forming the sense amplifier in an area of large width. CONSTITUTION:The width of each sense amplifier 2a, 3a is made wider than the width of an area A where two arrays of memory cells 1a are formed at intersections with each word line WL on a pair of bit lines BL.
申请公布号 JPH05114285(A) 申请公布日期 1993.05.07
申请号 JP19910274332 申请日期 1991.10.22
申请人 SHARP CORP 发明人 KUBOTA YASUSHI
分类号 G11C11/401;H01L21/8242;H01L27/108 主分类号 G11C11/401
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