INTEGRIERTE HALBLEITERSCHALTUNG MIT ALS DUENNSCHICHTSTEGE AUF DEN DIE AKTIVEN TRANSISTORBEREICHE TRENNENDEN FELDOXIDBEREICHEN ANGEORDNETEN LASTWIDERSTAENDE UND VERFAHREN ZU IHRER HERSTELLUNG.

摘要

The integrated transistor circuit contains at least one MOSFET or bipolar transistor with the load resistance provided by a thin-film path (14) applied to an oxide layer (2) for isolation of the active transistor zones. The load resistance layer (14) lies in the same plane as the transistor gate electrode (24) and has a doped polycrystalline silicon layer structure with its connection terminals (17) provided by a high melting metal silicide e.g. TaSi2. Pref. the load resistance layer (14) has side insulation layers and an applied SiO2 layer (5) defining the load resistance region.