发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
In a semiconductor device having at least two conductive layers (103-1, 103-2) disposed close to each other on an element isolating insulation film (102) formed on a first P-type region (101), a second P-type region (111) is formed in a region of the first P-type region which is between the two conductive layers. The impurity concentration of the second P-type diffusion region is higher than the first P-type region. A region of the element isolating insulation film which is on the second P-type diffusion region is thin to form a thin insulation film. With the features, no inversion layer is formed in the region of the first P-type region where the second P-type diffusion region is formed. As a result, the inversion layers under the conductive layers will not be in contact with each other. |
申请公布号 |
KR930003559(B1) |
申请公布日期 |
1993.05.06 |
申请号 |
KR19900004736 |
申请日期 |
1990.04.06 |
申请人 |
TOSHIBA CO., LTD.;TOSHIBA MICROELECTRONICS CO., LTD. |
发明人 |
HATANO, HIROSHI;YOSHII, ICHIRO;DAKATSUKA, SATORU |
分类号 |
H01L21/76;H01L27/118;H01L29/06;H01L29/78;(IPC1-7):H01L29/78;H01L27/10 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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