In an IMPATT diode consisting of a monocrystalline silicon substrate, on which is applied a heterostructure semiconductor layer sequence comprising an alternating arrangement of at least two different semiconductor layers forming one or more hetero-junctions, the novelty is that the generation zone contains at least one SiGe layer (2).
申请公布号
DE3785126(D1)
申请公布日期
1993.05.06
申请号
DE19873785126
申请日期
1987.08.07
申请人
LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT, DE
