发明名称 Optically isolated laser diode array
摘要 An optically isolated laser diode array is formed by growing a quantum well layer on a substrate after a plurality of strips are placed on the substrate. As the lattice of the quantum well of layer grows over the strips, it deforms the lattice structure of such layer causing it to be optically lossy in the regions above the strips. An insulative layer may then be deposited on the quantum well layer and patterned so that electrical contact may be made to the quantum well layer active regions which are disposed between each of the strips. In these active regions, the quantum well layer lattice structure is well formed to provide high quality active regions for laser diodes.
申请公布号 US5208823(A) 申请公布日期 1993.05.04
申请号 US19910753970 申请日期 1991.09.03
申请人 APPLIED SOLAR ENERGY CORPORATION 发明人 PATEL, RUSHIKESH
分类号 H01S5/223;H01S5/32;H01S5/34;H01S5/40 主分类号 H01S5/223
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