| 摘要 |
By using a contact including a configuration in which a first pattern 10 having a widthwise dimension W1 in an outer shape substantially equal to a lengthwise dimension L1 in an outer shape and a second pattern 20 having a widthwise dimension W2 in an outer shape smaller than the widthwise dimension W1 in an outer shape of the first pattern are connected to each other, over etching is reduced and unevenness of saggings of a photoresist at the time of exposure or baking is lowered. Further, the area of a contact region where a contact can be disposed is effectively used, so that the area of the contact can be increased and electric resistance can be decreased.
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