| 摘要 |
An optic modulator having a multiple quantum well structure which is fabricated of alternating layers of gallium arsenide and aluminum arsenide such that at zero electric field there is an indirect electron-hole transition between valence and conduction bands of the aluminum arsenide layers and gallium arsenide layers, respectively, and a direct electron-hole transition between the valence and conduction bands of the gallium arsenide wells. At zero field the multiple quantum well behaves much like bulk material due to the matching of the band gap energy levels of the gallium arsenide and aluminum arsenide. However, when a sufficient electric field is applied to the structure the energy levels decouple thereby modulating the wavelength of any light passing through the structure.
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