| 摘要 |
<p>PURPOSE: To prevent the metal spike of a contact hole site where a metal wiring and a junction layer contact from being formed by performing reaction sputtering from a titanium target containing a metal whose atom radius is larger than that of titanium, dipping at least a certain amount of metal in the titanium, and forming an amorphous titanium nitride film. CONSTITUTION: A titanium film 7 is physically deposited on a semiconductor substrate 1. After that, reactive sputtering is performed onto it from a titanium target containing a metal with a larger atom radius that that of titanium and an amorphous titanium nitride film 8 is formed. When the content of a specific metal is increased over a certain amount, titanium nitride film becomes an amorphous titanium nitride film, thus forming the amorphous titanium nitride film at the lower part of a metal wiring film, breaking the diffusion path of a metal, preventing a metal spike from being formed, and further preventing the generation of a leakage current and a junction breakdown, and hence improving the reliability in a semiconductor device.</p> |
