| 摘要 |
<p>PURPOSE:To completely remove a dry etched component residue layer by opening a hole on an overcoating film by photolithography technique and dry etching technique, and then lightly etching the surface of a pad aluminum exposed with organic alkali series etchant, etc. CONSTITUTION:An overcoating film 2 on a pad aluminum 4 is etched by dry etching using F-O series gas with a resist 1 as a mask after photopatterning. After the film is dry etched, the surface of the aluminum 4 is continuously lightly etched with organic alkali series etchant. After the aluminum is lightly etched, the photoresist 1 used for the etching is removed. Thus, the etching gas component residue region of the surface of the aluminum 4 at the time of dry etching with the F-O series gas can be removed by the alkali series etchant.</p> |
