发明名称 SEMICONDUCTOR LASER DEVICE AND ITS PRODUCTION
摘要 <p>PURPOSE:To prevent the defectives such as melted hole, etc., by the increase in energy density that is caused by laser light converged at an end-face breakdown preventive layer and a sealing resin layer in the semiconductor laser device with low cost and formable mold type so as to obtain the semiconductor laser device with a long service life. CONSTITUTION:An end-face breakdown preventive layer 10 and sealing resin layer 9 that are formed on a forward emitting face 12 of laser diode element 1 is composed of the resin having smaller refractive index than that of an active layer 4. Therefore, the laser light is always expaNded in the respective layers 9 and 10, so that the increase in energy density can be prevented.</p>
申请公布号 JPH05110207(A) 申请公布日期 1993.04.30
申请号 JP19910271256 申请日期 1991.10.18
申请人 FUJI ELECTRIC CO LTD 发明人 AMANO AKIRA;SHINDO YOICHI;NAKADA KATSUE;UMEGAKI TAKU
分类号 H01L23/29;H01L23/31;H01S5/00;H01S5/022;H01S5/028;H01S5/042 主分类号 H01L23/29
代理机构 代理人
主权项
地址