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发明名称
INSULATED GATE TYPE FIELD EFFECT TRANSISTOR
摘要
申请公布号
JPH05110075(A)
申请公布日期
1993.04.30
申请号
JP19910266494
申请日期
1991.10.15
申请人
NEC CORP
发明人
TAKAHASHI KENICHIRO
分类号
H01L29/78
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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