| 摘要 |
<p>PURPOSE:To easily and simply perform the selective back-etching operation of a silicon substrate in order to form a silicon support frame by a method wherein a shaved groove is formed mechanically in a prescribed region on an etching-mask material film. CONSTITUTION:A membrane material film 2 is first formed on the surface of a silicon substrate 1 which is worked to a support frame. Then, an etching- mask material film 3 is formed on the rear surface of the silicon substrate 1. A shaved groove 5 having a depth by which the face of the silicon substrate 1 is exposed is formed selectively, at a uniform density, in the etching mask material 3 in a region coming into contact with the rear surface of a light- transmitting window formation region 4 on the silicon substrate 1. The silicon substrate 1 is removed selectively by a back-etching operation 6 by using a wet etching means by making use of the etching mask material film 3 as a mask; a light-transmitting window 7 which exposes the rear surface of the membrane material film 2 is formed in the silicon substrate 1. Thereby, since the manufacturing method of an X-ray mask can be simplified sharply, it has a large effect on the formation of a fine pattern when an ultra-LSI is manufacture.</p> |
