| 摘要 |
PURPOSE:To provide the title DRAM having non-selective word lines formed into thin film for releasing the stepped shape of the non-selective word lines on a field oxide film. CONSTITUTION:The gate electrodes 10 of a DRAM are policide-structured while the non-selective word lines 22 on a field oxide film 20 are composed of silicide. In such a constitution, the gate electrodes 10 of DRAM and non- selective word lines 22 can be formed by the steps described as follows i.e., after the formation of a well, a gate oxide film 2 and a polysilicon layer 12 are deposited on the whole surface of a silicon substrate; a silicon nitride film 16 is deposited on the surface of the polysilicon layer 12 oxidized after patterning step; next the silicon nitride film 16 and needless polysilicon layer are removed and then a silicide layer is formed, furthermore, the needless silicide layer and the polysilicon layer are removed. |
