| 摘要 |
PURPOSE:To obtain a high dielectric constant and excellent insulating property by a method wherein an Al film or Al2Ox (O<x<3) film is provided on the surface of a base electrode consisting of Si-containing substance, and a capacitor insulating film, consisting of a Ta2O3 film, and a capacitor having no upper electrode, are formed on the upper surface of the above-mentioned film. CONSTITUTION:An Al film or an A/,0.(O<X<3) film 8 is formed on a polysilicon film 7 as a base electrode in such a manner that film thickness of 10 to 50Angstrom will be obtained, and during that period, a first annealing treatment is conducted in a non-oxidizing atmosphere, and the first annealing treatment is conducted after the formation of the film. Then, the Ta2O5 film 9 of capacitor insulating film of 50 to 250Angstrom in thickness is formed on the base electrode 7 containing the Al film or the Al2Ox (O<x<3) film 8, and after a second annealing treatment has been conducted in an oxidizing atmosphere, an Al2O3 film 8 is formed between the base electrode 7 and the Ta2O5 film 9. Besides, a polysilicon film 10 is formed on the Ta2O5 film 9 as an upper electrode, and a capacitor is constituted. |
