| 摘要 |
PURPOSE:To improve reliability in a semiconductor device and a manufacturing yield. CONSTITUTION:In a semiconductor device having a common lead 4, 5 lead width C of the common lead 4 is made thinner than a lead width H in a bonding region of an inner lead 5 and also an interval E between the common lead 4 and the bonding region of the inner lead 5 is made larger than an interval I between the bonding regions of the inner lead 5. As the interval between a bonding wire 6 stretching across the common lead 4 and the common lead 4 is made larger, a contact between the common lead 4 and the bonding wire can be reduced. |
