| 摘要 |
PURPOSE:To maintain the information of a signal electron utilizing quantum effect by a method wherein a gate, by which depletion bias is applied, is provided on a quantum fine wire well, and an electronic write-in and the read- out operation is conducted while the potential of the well is being controlled by the internal potential control electrode in a memory well. CONSTITUTION:One end of a quantum fine wire 1 is connected to an electron memory well, other end of the quantum fine wire is used as the electron writing-in and read-out terminal, a gate electrode 2 is connected to a quantum fine wire 1 through the intermediary of an insulating film, and an internal potential control electrode 3 is connected to the quantum fine wire 1 through an insulating film. By controlling the potential of the gate electrode 2 and control electrode 3, the potential in the quantum fine wire of the lower part of each electrode can be controlled. Accordingly, electrons can be confined in the lower part of the inner potential control electrode 3 of the quantum fine wire 1, electrons can be read out, and they can be utilized as a memory element. |
