| 摘要 |
<p>PURPOSE:To provide an electron multiplying device having an inner electron multiplying function and simple in structure and to easily realize a photoelectron emission device having an inner electron multiplying function and high in photoelectron radiation sensitivity to a region of long wavelength by taking advantage of the electron multiplying device. CONSTITUTION:An Al semiconductor anode 2-2 patterned into meshes is formed on one surface of a semi-insulating GaAs 1-1, and a semiconductor cathode 2-1 is formed on the other surface of the semi-insulating GaAs 1-1. Alkaline metal or alkaline oxide 1-7 such as Cs or CsO or the like of one kind or several kinds is adsorbed in the surface of the semiconductor anode. As an electric field of over 0.5kV/cm is applied onto the semiconductor by a power supply 3-1, a current flowing through the semiconductor 1-1 is multiplied. Therefore, electrons 4-3 flowing through the semiconductor 1-1 are made to reach the surface of the anode 2-2 as they are multiplied and easily emitted into vacuum and captured by an external anode 2-3.</p> |
