发明名称 SEALING METHOD OF SEMICONDUCTOR
摘要 PURPOSE:To prevent generation of crack and void in sealing resin and a solder resist layer even if a heating treatment such as a reflow treatment of cream solder is performed after a resin sealed semiconductor is stored in the air for a long period. CONSTITUTION:A solder resist layer 4 is provided to enclose a sealing area 1A of a semiconductor 2 on a substrate 1, the semiconductor 2 is mounted inside the sealing area 1A, and a semiconductor is sealed by supplying and curing uncured sealing resin 8 to the sealing area 1A. In such a sealing method of a semiconductor, a boundary and a peripheral part thereof between the sealing resin 8 and the solder resist layer 4 are covered with resin having a thermal expansion coefficient which is intermediate between those of the sealing resin 8 and the solder resist layer 4 and having water resistance which is higher than that of the both.
申请公布号 JPH05109936(A) 申请公布日期 1993.04.30
申请号 JP19910293573 申请日期 1991.10.14
申请人 SONY CORP 发明人 OZAKI YUJI
分类号 H01L21/56;H01L23/28;H01L23/29;H01L23/31 主分类号 H01L21/56
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