GAP RED LIGHT-EMITTING ELEMENT

摘要

PURPOSE:To eliminate the deterioration of luminance in GaP red light-emitting element. CONSTITUTION:In GaP red light-emitting element formed when n-type GaP epitaxial layer is grown on n-type GaP substrate and p-type GaP epitaxial layer is grown on the n-type layer, Si concentration in said n-type epitaxial layer is 5X10<17>atoms/cc and less and S concentration is 1X10<18>atoms/cc and less.