| 摘要 |
PURPOSE:To enable a polycrystalline silicon film with a larger particle diameter to be formed by forming an amorphous silicon film where P is doped and an amorphous silicon film where no P is doped in lamination on a substrate and then heat-treating them. CONSTITUTION:An amorphous film where P is doped and an amorphous silicon film where no P is doped are laminated on a substrate 60 which is made of crystal by the plasma CVD method. After that, these amorphous silicon films are heat-treated for several tens of hours for example at 600 deg.C, thus achieving polycrystallization so that the amorphous silicon film where P is doped is in a particle diameter exceeding several mum and achieving polycrystallization so that the non-doped amorphous silicon film on it has more than several mum particle diameter. As a result, an N-type polycrystalline silicon film 61 with more than several mum particle diameter and a non-doped or N<->-type polycrystalline silicon film 62 can be formed. |
