| 摘要 |
PURPOSE: To enable reduction in abandonment of an etched wiring for an integrated circuit from a support material by forming a lead wire in a winding manner which reaches a connection point of a frame with an adjacent integrated circuit wiring. CONSTITUTION: A conductor path of an etched wiring 4 is abutted, at a center portion of the wiring, against a portion where an integrated circuit is to be installed after cutting a metallized region 5. A galvanic frame includes a lead wire 1 reaching a connection point 2 with the etching wiring 4, and metallized scored band portions 6 on both sides of the etching wiring 4. The lead wire 1 is located between the etching wirings 4. In this case, the lead wire is formed in a winding manner at various portions, so that the etching wiring 4 is isolated from the lead wire 1 by cutting at a cut portion 7. Thus, abandonment of the etched wiring 4 for an integrated circuit from a film as a support material may be reduced. |
